NoMIS Power Medium-Voltage SiC MOSFETs

NoMIS Power was formed on 4 May 2020 in Albany, New York, as a spinoff of SUNY Polytechnic Institute by Dr. Adam J. Morgan, Dr. Woongje Sung, Dr. Shadi Shahedipour-Sandvik and Dr. Anant Agarwal of Ohio State University. It brings silicon carbide (SiC) research in device design, packaging, burn-in and screening into commercial power semiconductors from 1200 V to 20 kV.

Its current focus is medium-voltage planar SiC MOSFETs, such as the 3.3 kV 35 mOhm 88 A N3PT035MP330K and the 1.7 kV 100 mOhm N3PT100MP170K, supplied in TO-247-4L packages or as bare die and rated to 175 C. A 6.5 kV MOSFET has been demonstrated, with a roadmap to 10 kV and 20 kV devices. Wafers are made through foundry partners such as X-FAB. NoMIS also offers customisation, regional supply options and licensing, for makers of grid equipment, solid-state breakers, rail, heavy EV, marine and defence power systems.

• 3.3 kV MOSFETs: planar SiC devices at 35 mOhm/88 A and 80 mOhm, with 50 and 25 mOhm parts on the roadmap.
• 1.7 kV MOSFET: 100 mOhm, 24 A device for about 1 kV DC buses.
• High-voltage roadmap: 6.5 kV MOSFET demonstrated, path to 10 kV and 20 kV devices.
• Packaging: TO-247-4L, bare die and custom packages on request.
• Reliability: 175 C operation, thick gate oxide, burn-in and screening methods.
• Licensing: technology licensing and customised device development.

A Vietnamese battery storage or solar inverter integrator can use 1.7 kV and 3.3 kV SiC MOSFETs to simplify high-voltage converters. A rail or electric bus supplier can evaluate the devices in traction converters. A grid equipment maker can prototype solid-state circuit breakers for industrial parks.

Medium-voltage SiC MOSFETs let equipment makers replace stacked silicon IGBTs with fewer devices in 1 kV to 2 kV DC bus systems. A thicker gate oxide and high dv/dt capability improve ruggedness, and the company reported a breakthrough in short-circuit withstand time in 2025. Bare die and custom packaging options support module makers. Licensing and regional supply options give buyers more sourcing flexibility.

Grid modernisation, HVDC links, solid-state transformers, battery storage and rail electrification are creating demand for SiC devices above 1.7 kV. Southeast Asian grids, including Vietnam's, are adding large solar, wind and storage capacity and planning new transmission, which increases the need for efficient medium-voltage power conversion.

Formed on 4 May 2020 as a SUNY Polytechnic Institute spinoff, based at 251 Fuller Rd, Albany, New York. Supported by ARPA-E, DOE, NSF, NYSERDA and other agencies; fab partners include X-FAB. Joined the ARPA-E DC-GRIDS consortium in May 2026. Astute Group is its authorised distributor for Europe and other regions.