Enkris GaN-on-Si Epitaxial Wafers for Power Devices

Suzhou Enkris Semiconductor Co., Ltd. was founded in March 2012 in Suzhou Industrial Park, China, by Dr. Cheng Kai, an early developer of gallium nitride on silicon (GaN-on-Si) epitaxy. It produces GaN epitaxial wafers that chip makers use to build power devices, RF and optoelectronic components without growing the material themselves.

For power electronics it supplies GaN-on-Si epiwafers in 100, 150, 200 and 300 mm sizes, in depletion-mode and enhancement-mode HEMT structures with breakdown voltages from 200 V to 1200 V, plus custom structures. It also offers GaN-on-sapphire and GaN-on-Si wafers for UVC to red emitters, full-colour GaN for micro-LED displays and a micro-LED optical interconnect product. Customers are power device makers, foundries and display and optical module companies.

• GaN-on-Si power epi: 100 to 300 mm wafers for power HEMTs.
• Device modes: depletion-mode and enhancement-mode structures.
• Voltage range: breakdown voltages from 200 V to 1200 V.
• Optoelectronic epi: GaN-on-sapphire and GaN-on-Si for UVC to red emitters.
• Micro-LED: full-colour GaN series and a 1.6 GHz micro-LED optical interconnect product.
• Custom epi: tailored structures for customer device processes.

A Vietnamese chip design company developing GaN power transistors can source epiwafers for prototype runs at a partner foundry. A university or research institute can use standard GaN-on-Si wafers for power device research. A display or optical module maker can evaluate micro-LED epi for AR and interconnect products.

Chip makers can buy ready GaN epiwafers instead of investing in MOCVD growth lines, shortening time to market for GaN power devices. Wafer sizes up to 300 mm match silicon fab tooling and support lower cost per die. Both D-mode and E-mode structures from 200 V to 1200 V cover chargers through industrial and automotive uses. Custom epi design supports differentiated device processes.

GaN power devices are moving to 200 mm and 300 mm silicon substrates to cut cost for chargers, data centre power and automotive uses, and supply chains are standardising GaN epi specifications. Asian chip makers dominate GaN device production, and Vietnam's emerging chip packaging and design sector could tap regional epi suppliers for future power device projects.

Founded in March 2012 in Suzhou Industrial Park by Dr. Cheng Kai. Raised Series B+ in 2022 led by Goertek Microelectronics, then Series C and C+ in 2022 and 2023, each several hundred million RMB. Signed a 12-inch GaN partnership with Dongwei Semiconductor in October 2025 and led a Chinese national standard for GaN-on-Si power HEMT epiwafers released in October 2026. Collaborates with Virginia Tech CPES on research.