SemiQ QSiC Gen3 SiC MOSFETs & Power Modules

Organization
SemiQ Inc. · United States
Solution Type
Ready Product / Solution
Collaboration
Others

1. Technology overview

SemiQ Inc., based in Lake Forest, California, designs, develops and supplies silicon carbide (SiC) power semiconductors and 150 mm SiC epitaxial wafers for high-voltage applications. It serves power electronics makers in solar energy, EV charging, automotive, energy storage, medical and data centre markets.

Its QSiC product line covers SiC MOSFET and diode discretes, MOSFET and diode modules and bare die. The third-generation 1200 V MOSFETs cut specific on-resistance and turn-off losses by up to 30% versus earlier generations, and come in SOT-227 co-pack modules down to 7.4 mOhm and in S3 half-bridge, B2T1 six-pack and B3 full-bridge modules rated up to 608 A. Every part is screened with wafer-level gate-oxide burn-in above 1400 V.

2. Highlighted features & specifications

  • Gen3 SiC MOSFETs: 1200 V devices with up to 30% lower specific on-resistance and turn-off loss.
  • SOT-227 modules: isolated co-pack modules from 7.4 to 80 mOhm, with or without Schottky diodes.
  • High-current modules: S3 half-bridge up to 608 A, B2T1 six-pack and B3 full-bridge.
  • Reliability screening: wafer-level gate-oxide burn-in above 1400 V and avalanche testing.
  • SiC diodes: discrete and module Schottky diodes plus bare die.
  • Epitaxy: 150 mm SiC epitaxial wafer supply.

3. Potential application

A Vietnamese EV charger manufacturer can use S3 half-bridge modules in 1200 V DC fast chargers. A solar and battery storage integrator can build higher-efficiency inverters with SOT-227 modules. An industrial drive maker can replace IGBT modules to cut losses in motor drives.

4. Benefits

Lower on-resistance and switching losses raise converter efficiency in chargers, solar inverters and server power supplies. Wafer-level burn-in above 1400 V and avalanche testing reduce field failure risk. Standard packages such as SOT-227 and 62 mm S3 allow drop-in upgrades from silicon IGBT designs. Junction-to-case thermal resistance as low as 0.07 C/W simplifies cooling.

6. Other information

Headquartered in Lake Forest, California. Quality system certified to AS 9100 and ISO 9001:2015, with RoHS and REACH compliance. Launched Gen3 SOT-227 modules in April and November 2025 and high-current S3, six-pack and full-bridge modules in December 2025. Products are sold through distributors including Mouser and Digi-Key, with representatives in Europe and Asia.

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