AGNIT GaN Wafers & RF Power Devices

AGNIT Semiconductors Pvt. Ltd. is a fab-lite gallium nitride (GaN) semiconductor company based at the Indian Institute of Science (IISc) in Bangalore, India, building on more than 17 years of GaN research expertise from IISc. It designs and develops GaN wafers, components and modules for strategic, telecom and power conversion markets, aiming to give India a domestic source of GaN chips.

Its portfolio includes GaN epitaxial wafers, GaN RF devices such as high power density power amplifiers with wide bandwidth and good linearity, and evaluation boards. Products follow a P.A.C.E. approach (high power, affordable, compact, efficient) to optimise size, weight, power and cost, backed by over 20 patents and ISO 9001:2015 certification. Customers are defence, telecom infrastructure and satellite system makers.

• GaN wafers: epitaxial GaN wafers for device fabrication.
• GaN RF devices: power amplifiers with high power density, wide bandwidth and good linearity.
• Evaluation boards: boards for testing devices in customer systems.
• P.A.C.E. design: high power, affordable, compact and efficient SWaP-C optimisation.
• Test lab: environmental chambers from -60 C to 125 C and RF load-pull systems at IISc.
• IP and quality: over 20 patents and ISO 9001:2015 certified quality system.

A Vietnamese telecom equipment maker can evaluate AGNIT GaN power amplifiers for 5G radio units. A satellite or ground station developer can use GaN RF devices in transmitters. A research institute can source GaN wafers for joint device research.

GaN power amplifiers deliver higher power density and efficiency than silicon or GaAs parts, reducing the size and cooling of radio front ends. A domestic Indian supply chain from wafer to device gives buyers in strategic sectors a non-traditional source. Evaluation boards speed up system integration. An in-house test and qualification lab at IISc shortens characterisation and reliability testing.

Governments across Asia are building domestic compound semiconductor capability for telecom, satellite and defence electronics, and GaN is the main technology for high-power radio front ends. Vietnam is also investing in domestic telecom equipment, satellites and chip design, creating demand for GaN components from regional suppliers.

Based at the Innovation Centre, FSID, Indian Institute of Science, Bangalore. Raised about Rs 60 crore to date from 3one4 Capital and Zephyr Peacock with participation from Lakshmi Narayanan. Received the IEEE Bangalore Section Technology Startup Award 2025 and set up a Rs 3 crore GaN test lab at IISc in June 2026. ISO 9001:2015 certified.