CGD ICeGaN GaN Power ICs

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun out of the University of Cambridge in 2016 by Prof. Florin Udrea and Dr. Giorgia Longobardi. It designs and sells gallium nitride (GaN) transistors and ICs that make power electronics more energy efficient, with offices in Cambridge, UK and New Taipei City, Taiwan.

Its ICeGaN (integrated circuit enhancement-mode GaN) technology adds smart interface circuitry on the GaN die, so the transistors can be driven by standard silicon gate drivers like a MOSFET and do not need negative turn-off voltages. The portfolio includes 650 V ICeGaN HEMTs and power ICs, including an automotive device with 9 mOhm on-resistance, aimed at chargers, industrial power supplies, 800 VDC AI data centre power and EV inverters. Customers are power supply, data centre and automotive system makers.

• ICeGaN HEMTs: 650 V enhancement-mode GaN transistors driven like a MOSFET.
• Integrated interface: on-chip circuitry removes the need for negative gate voltage.
• Automotive device: 650 V ICeGaN part with 9 mOhm on-resistance for EV powertrains.
• Data centre focus: power ICs positioned for 800 VDC AI data centre architectures.
• Traceability: unique 2D barcodes on devices to support process ruggedness and reliability.
• Design support: reference designs, whitepapers and engineering support for customers.

A Vietnamese power supply or charger maker can use ICeGaN devices to build smaller, more efficient adapters and industrial PSUs. A data centre operator or server rack integrator can evaluate GaN-based power shelves. An EV or e-motorbike maker can test GaN for on-board chargers and inverters.

Designers can replace silicon MOSFETs with GaN without redesigning gate drive, since ICeGaN works with standard drivers. The company states efficiency levels above 99% and energy savings of up to 50% in high-power uses such as EVs and data centre supplies. Higher switching frequency with lower losses allows smaller, lighter power converters. Built-in protection and smart functions improve robustness compared with discrete GaN.

AI data centres, EV powertrains and fast chargers are pushing power conversion towards higher efficiency and density, where GaN is replacing silicon and competing with SiC. Asia hosts most power supply and charger manufacturing, and Vietnam's growing electronics assembly and EV sectors are part of that supply chain.

Spun out of the University of Cambridge in 2016. Offices in Cambridge, UK and Linkou, New Taipei City, Taiwan. Raised a 32 million USD Series C in February 2025 led by a strategic investor with British Patient Capital, bringing total funding to 62 million USD. Has a long-term collaboration with NXP Semiconductors and an inverter development deal with IFP Energies nouvelles.